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| July 1997 FDC6301N Dual N-Channel , Digital FET General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild 's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, these N-Channel FET's can replace several digital transistors, with a variety of bias resistors. Features 25 V, 0.22 A continuous, 0.5 A Peak. RDS(ON) = 5 @ VGS= 2.7 V RDS(ON) = 4 @ VGS= 4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model. SOT-23 SuperSOTTM-6 Mark: .301 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 INVERTER APPLICATION Vcc 4 3 D OUT 5 6 2 IN G S GND 1 Absolute Maximum Ratings Symbol VDSS, VCC VGSS, VIN ID, IOUT PD TJ,TSTG ESD Parameter TA = 25oC unless other wise noted FDC6301N 25 8 Units V V A Drain-Source Voltage, Power Supply Voltage Gate-Source Voltage, VIN Drain/Output Current - Continuous - Pulsed Maximum Power Dissipation (Note 1a) (Note 1b) 0.22 0.5 0.9 0.7 -55 to 150 6.0 W Operating and Storage Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) C kV THERMAL CHARACTERISTICS RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 140 60 C/W C/W FDC6301N Rev.C (c) 1997 Fairchild Semiconductor Corporation Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25 o C VDS = 20 V, VGS = 0 V TJ = 55C IGSS Gate - Body Leakage Current VGS = 8 V, VDS= 0 V ID = 250 A, Referenced to 25 o C VDS = VGS, ID = 250 A VGS = 2.7 V, ID = 0.2 A TJ =125C VGS = 4.5 V, ID = 0.4 A ID(ON) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd On-State Drain Current Forward Transconductance VGS = 2.7 V, VDS = 5 V VDS = 5 V, ID= 0.4 A VDS = 10 V, VGS = 0 V, f = 1.0 MHz 0.2 0.25 0.65 -2.1 0.85 3.8 6.3 3.1 1.5 5 9 4 A S ON CHARACTERISTICS (Note 2) 25 25 1 10 100 V mV /oC A A nA mV /oC V BVDSS/TJ IDSS VGS(th)/TJ VGS(th) RDS(ON) Gate Threshold Voltage Temp.Coefficient Gate Threshold Voltage Static Drain-Source On-Resistance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 9.5 6 1.3 pF pF pF SWITCHING CHARACTERISTICS (Note 2) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 5 V, ID = 0.2 A, VGS = 4.5 V VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 5 4.5 4 3.2 0.49 0.22 0.07 10 10 8 7 0.7 ns ns ns ns nC nC nC Inverter Electrical Characteristics (TA = 25C unless otherwise noted) IO (off) VI (off) VI (on) RO (on) Output to Ground Resistance Zero Input Voltage Output Current Input Voltage VCC = 20 V, VI = 0 V VCC = 5 V, IO = 10 A VO = 0.3 V, IO = 0.005 A VI = 2.7 V, IO = 0.2 A 1 3.8 5 1 0.5 A V V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. RJA shown below for single device operation on FR-4 in still air. a. 140OC/W on a 0.125 in2 pad of 2oz copper. b. 180OC/W on a 0.005 in2 of pad of 2oz copper. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. FDC6301N Rev.C Typical Electrical Characteristics 0.5 3.5 3.0 2.7 2.5 DRAIN-SOURCE ON-RESISTANCE V GS = 4.5V 1.4 , DRAIN-SOURCE CURRENT (A) R DS(on) , NORMALIZED 0.4 VGS = 2.0V 1.2 0.3 2.5 1 2.7 3.0 3.5 4.0 4.5 0.2 2.0 0.8 0.1 I 1.5 0 0 1 V DS D 0.6 2 3 4 , DRAIN-SOURCE VOLTAGE (V) 5 0 0.1 0.2 0.3 0.4 0.5 ID , DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 15 R DS(on) , ON-RESISTANCE (OHM) I D = 0.2A V GS = 2.7 V DRAIN-SOURCE ON-RESISTANCE 25C 12 I D = 0.2A 125C 1.6 R DS(ON), NORMALIZED 1.4 9 1.2 6 1 0.8 3 0.6 -50 0 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 150 2 2.5 3 3.5 4 4.5 5 V GS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On Resistance Variation with Gate-To- Source Voltage. 0.2 V DS = 5.0V T = -55C J 25C I S, REVERSE DRAIN CURRENT (A) 0.5 V GS = 0V 0.2 0.1 125C I D , DRAIN CURRENT (A) 0.15 TJ = 125C 25C 0.1 0.01 -55C 0.05 0.001 0 0.5 1 1.5 2 V GS , GATE TO SOURCE VOLTAGE (V) 2.5 0.0001 0.2 0.4 0.6 0.8 1 V SD , BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC6301N Rev.C Typical Electrical Characteristics (continued) 5 30 V GS , GATE-SOURCE VOLTAGE (V) I D = 0.2A 4 VDS = 5V 10V 15V CAPACITANCE (pF) 20 10 C iss C oss 3 5 2 3 2 f = 1 MHz V GS = 0V C rss 0.5 1 2 5 10 25 1 1 0.1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 V , DRAIN TO SOURCE VOLTAGE (V) DS Qg , GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 1 0.5 ID , DRAIN CURRENT (A) IT IM )L ON S( RD 5 1m 10 s ms 4 POWER (W) 0.2 0.1 0.05 10 1s DC 0m s 3 SINGLE PULSE RJA =See note 1b TA = 25C 2 0.02 0.01 0.5 V GS = 2.7V SINGLE PULSE RJA =See note 1b TA = 25C 1 V DS 1 2 5 10 15 25 35 0 0.01 0.1 1 10 100 300 , DRAI N-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.5 D = 0.5 0.2 0.1 0.05 0.2 0.1 P(pk) 0.05 0.02 0.01 Single Pulse RJA (t) = r(t) * R JA R JA = See Note 1b t1 t2 0.02 0.01 0.0001 TJ - TA = P * R JA(t) Duty Cycle, D = t 1/ t 2 0.01 0.1 t 1, TIME (sec) 1 10 100 300 0.001 Figure 11. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal response will change depending on the circuit board design. FDC6301N Rev.C |
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